PART |
Description |
Maker |
BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken Vishay Siliconix
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1205 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
BF1102 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF904WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors Philips Semiconductors
|
BF991 |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF904A BF904AR BF904AWR |
N-channel dual gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
3SK297ZP-TL-E 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
BF998RAW-GS08 BF998RBW-GS08 BF998A-GS08 BF998RA-GS |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
VISHAY SEMICONDUCTORS Vishay Siliconix
|